Spectrometer detectors

The detector is a key component of the spectrometer, capturing photons after they pass through the optical system and have been separated by wavelength.

When captured, these photons are converted into an electrical signal, with the strength of the signal corresponding to the number of photons detected.

Detectors come in various materials and configurations, each optimized for different applications. Selecting the right one depends on factors such as cost, speed, sensitivity, and noise performance. To accommodate diverse needs, we offer multiple detector options for most of our spectrometers.

Each detector is given a three digit identifier used in the name of the spectrometer and the DISB electroncis. For example, the FREEDOM FSV-101 and other spectrometers with a “101” ending all use the CMOS S11639 detector, whcih in turn uses the DISB-101T electronics.

Ibsen Photonics spectrometers can be supplied with or without electronics allowing for full control over the implementation and design process.
Spectrometers can alternatively come equipped with Ibsen Phtonics FPGA based DISB electronics (Digital Image Sensor Board) for seamless integration and ease of use of the detector via a SPI connection. The DISB electronics, can additionally be paired with a DISB-USB Bridge board enabling connection over USB and use of Ibsen Photonics evaluation software, SDK and software sample files.

SpectrumOnDetectorIllustration

CMOS Detectors

CMOS (Complementary Metal-Oxide Semiconductors) detectors are a class of detectors often characterized by their simplicity and ease of operation.

Modern CMOS detectors are highly sensitive and strike a good balance between sensitivity, noise, speed and cost, making them an ideal choice for many spectroscopy applications. As a result, they find use in anything from LIBS to absorbance spectroscopy.

S11639-01S14739-20S13496S17122
Spectrometer suffix no.101105109191
Supported DISB electronicsDISB-101TDISB-105DISB-101TM-DISB-191
Pixels size14 x 200 µm14 x 200 µm7 x 200 µm7 x 200 µm
Pixel pitch14 µm14 µm7 µm7 µm
Number of pixels2048 x 1256 x 14096 x 12048 x 1 5
Max. Line-rate4672 Hz28735 Hz2387 Hz61 kHz or 101 kHz 7
Min. Integration time5.4 µs 5.4 µs 5.4 µs2.225 µs
Electronic shutterYes Yes YesYes
Typical SNR 1380:1380:1380:1600:1
Typ. Dynamic range 25000:15000:15000:12900:1
Typ. Power Consumption 3150 mW75 mW200 mW677 mW
Spectral range (Usable)180-1100 nm180-1100 nm180-1100 nm400-1000 nm
Peak Sensitivity wavelength700 nm700 nm700 nm650 nm
TE-coolingUncooledUncooledUncooledUncooled
Operating Temperature-40 to +65 oC-40 to +65 oC-40 to +65 oC-40 to +85 oC
Storage Temperature-40 to +65 oC-40 to +65 oC-40 to +65 oC-40 to +85 oC

NMOS Detectors

Linear NMOS (N-channel Metal-Oxide Semiconductors) detectors consist of a self-scanning photodiode array and is ideal for multichannel spectroscopy, where very high signal-to-noise ratios (SNR) are required.

NMOS detectors offer a number of benefits, such as low power consumption, a large photosensitive array (pixels), and well depths providing a wide dynamic range, high SNR and excellent linearity.

The large pixel size and well depth of NMOS detectors typically make them less suited for applications requiring high optical resolution or short integration times.

A common use case would be absorbance spectroscopy, where a high dynamic range often is required.

NMOS

 

 

S8380S8381S8382S8383
Spectrometer suffix no.220220290290
Supported DISB electronicsDISB-220DISB-220DISB-290 DISB-290
Pixels size45 x 2500 µm20 x 2500 µm45 x 2500 µm20 x 2500 µm
Pixel pitch50 µm25 µm50 µm25 µm
Number of pixels128, 256 or 512 x 1256, 512 or 1024 x 1128, 256 or 512 x 1256, 512 or 1024 x 1
Max. Line-rate3900, 7800 or 15600 Hz1950, 3900 or 7800 Hz 3900, 7800 or 15600 Hz1950, 3900 or 7800 Hz
Min. Integration time0.1 ms0.1 ms0.1 ms0.1 ms
Electronic shutterNoNo No No
Typ. SNR 110000:110000:110000:110000:1
Typ. Dynamic range 220000:120000:120000:120000:1
Typ. Power Consumption 31 mW1 mW1 mW1 mW
Spectral range (Usable)190-1100 nm190-1100 nm190-1100 nm190-1100 nm
Peak Sensitivity wavelength750 nm750 nm750 nm750 nm
TE-cooling 4UncooledUncooled1-Stage1-Stage
Operating Temperature-40 to +65 oC-40 to +65 oC-40 to +65 oC-40 to +65 oC
Storage Temperature-40 to +85 oC-40 to +85 oC-40 to +85 oC-40 to +85 oC

BT-CCD Detectors

Back-Thinned Charged-Coupled Devices (BT-CCD) are a class of detectors characterised by very high quantum efficiency, low noise and smooth spectral response.

They are typically found in applications requiring a combination of high sensitivity and low noise, such as Raman or LIBS spectroscopy.

BT-CCD detectors come in many different configurations. Some BT-CCD detectors consist of tall 2D pixels arrays making them ideal for applications where tall fiber bundle and/or pixel binning is required, while others are made with electronic shutters for ultra-fast measurement, where timing is essential.

BT_CCD

 

S10420-1006S10420-1106 S11156-2048-02S11850-1106S14651-2048S16011-1106S7031-1007S
Spectrometer suffix no.305315380385388386394
Supported DISB electronicsDISB-315TDISB-315TDISB-380DISB-386DISB-386DISB-386NA.
Pixels size14 x 14 µm14 x 14 µm14 x 1000 µm14 x 14 µm14 x 14 µm14 x 14 µm24 x 24 µm
Pixel pitch14 µm14 µm14 µm14 µm14 µm14 µm24 µm
Number of pixels1024 x 642048 x 642048 x 12048 x 642048 x 1922048 x 641044 x 128
Max. Line-rate341 Hz200 Hz4633 Hz200 Hz68 Hz200 Hz387 Hz
Min. integration time2.939 ms4.987 ms2 µs 4.987 ms6.523 ms 4.987 ms2.58 ms
Electronic shutterNo YesNoNoNoNoNo
Typ. SNR 1542:1542:1350:1542:1542:1542:11000:1
Typ. Dynamic range 250000:1 50000:16670:1 50000:1 50000:1 50000:140000:1
Typ. Power Consumption 34 mW4 mW75 mW4 mW4 mW4 mW13 mW
Spectral range (Usable)180-1100 nm180-1100 nm180-1100 nm180-1100 nm180-1100 nm200-1100 nm200-1100 nm
Peak Sensitivity wavelength600 nm600 nm600 nm600 nm600 nm700 nm650 nm
TE-coolingUncooledUncooledUncooled1-Stage (+5 oC)1-Stage (+5 oC)1-Stage (+5 oC)1-Stage (-10 oC)
Operating Temperature-50 to +50 oC-50 to +50 oC-50 to +60 oC-50 to +50 oC-50 to +50 oC-50 to +50 oC-50 to +50 oC
Storage Temperature-50 to +70 oC-50 to +70 oC-50 to +70 oC-50 to +70 oC-50 to +70 oC-50 to +70 oC-50 to +70 oC

InGaAs Detectors

InGaAs (Indium Gallium Arsenide) detectors are cutting-edge sensors designed specifically for near-infrared (NIR) detection. With models covering wavelengths from 900 nm to 2500 nm, these detectors offer a high dynamic range and significantly minimized dark current.

Linear InGaAs detectors feature integrated CMOS Readout Circuitry (ROIC), making them easy to operate and seamlessly integrate into various systems — all while supporting high line rates for rapid data acquisition.

Detectors can be manufactured with either a Front-Illuminated or Back-Illuminated structure:

Front-Illuminated detectors (Hamamatsu G11508, G11476, G11477) provide exceptional quantum efficiency (QE) and a broad spectral response, ensuring high sensitivity across the NIR spectrum.

Back-Illuminated detectors (Hamamatsu G13913, G11620, G17225) offer a compact form factor and narrow pixel pitch, making them ideal for space-constrained applications.

G13913-256FGG11620-256DAG11620-512DAG11476N-128LBG11477-256WBG11508-256SAG11508-512SAG17225-1024DG
Spectrometer suffix no.400410411415466470471486
Supported DISB electronicsDISB-400DISB-411DISB-411 DISB-415DISB-466DISB-466DISB-466DISB-486
Pixels size25 x 250 µm50 x 500 µm25 x 500 µm50 x 250 µm50 x 250 µm50 x 500 µm25 x 500 µm12.5 x 250 µm
Pixel pitch25 µm50 µm25 µm50 µm50 µm50 µm25 µm12.5 µm
Number of pixels256 x 1256 x 1 512 x 1128 x 1256 x 1256 x 1512 x 11024 x 1
Max. Line-rate7290 Hz17200 Hz9150 Hz30800 Hz17200 Hz17200 Hz9150 Hz50000 Hz
Min. Integration time1 µs12 µs12 µs1.2 µs1 µs1 µs1 µs28 µs
Electronic shutterYesYesYesYesYesYesYes Yes
Typ. SNR 18000:112000:112000:112000:112000:112000:112000:1200:1
Typ. Dynamic range212000:114000:114000:114000:114000:114000:114000:1213:1
Typ. Power Consumption 366 mW275 mW400 mW175 mW225 mW225 mW425 mW313.5 mW
Spectral range (Usable)950-1700 nm950-1700 nm950-1700 nm900-2050 nm900-2150 nm900-1670 nm900-1670 nm950-1700 nm
Peak Sensitivity wavelength1550 nm1550 nm1550 nm1950 nm1950 nm1550 nm1550 nm1550 nm
TE-coolingUncooledUncooledUncooledUncooled2-Stage (-20 oC) 1-Stage (-10 oC) 1-Stage (-10 oC)Uncooled
Operating Temperature-10 to +60 oC-10 to +60 oC-10 to +60 oC-10 to +60 oC-20 to +70 oC-20 to +70 oC-20 to +70 oC-10 to +60 oC
Storage Temperature-20 to +70 oC-20 to +70 oC-20 to +70 oC-20 to +70 oC-40 to 85 oC-40 to 85 oC-40 to 85 oC-20 to +70 oC

Cameras for Spectroscopy

Cameras are self-contained modules that include a detector, electronics, and casing.

Spectroscopy cameras come in various models, each designed for specific applications. For example, deep-cooled cameras with Deep Depletion (DD) CCDs are ideal for Raman spectroscopy, while high-speed line-scan cameras are commonly used in Optical Coherence Tomography (OCT).

 

Teledyne OctoplusHamamatsu C16821Andor iVac 316M-DISB-191
Spectrometer suffix no.Numbers from 119 to 142190C316191
InterfaceUSB3 or CameraLinkMIPI CSI-2USB2.0MIPI CSI-2
Pixels size10 x 200 µm7 x 200 µm15 x 15 µm7 x 200 µm
Pixel pitch10 µm7 µm15 µm7 µm
Number of pixels2048 x 11024 x 12000 x 2562048 x 1 5
Max. Line-rate20, 80, 130 or 250 kHz 634 kHz142 Hz61 kHz or 101 kHz 7
Min. integration time3.4 µs 2.675 µs 7 ms2.225 µs
Electronic shutterYes Yes NoYes
Typ. SNR 1355:1200:1600:1600:1
Typ. Dynamic range 22800:11400:160000:12900:1
Typ. Power Consumption 33.6 W1.5 W24W 8891 mW
Spectral range (Usable)400-1050 nm400-1000 nm200-1100 nm400-1000 nm
Peak Sensitivity wavelength700 nm650 nm800 nm650 nm
TE-coolingUncooledUncooledYes (-60 oC)Uncooled
Wavelength CalibrationProvided in seperate .txt fileProvided in seperate .txt fileProvided in seperate .txt fileStored to on-board memory
Evaluation SoftwareAvailableAvailableAvailableAvailable
Operating Temperature-40 to +65 oC0 to +50 oC0 to +40 oC0 to +50 oC
Storage Temperature-40 to +70 oC-20 to +70 oC-25 to +50 oC-20 to +70 oC

1 – Based on values for typical detector performance

2 – Defined as Full Capacity divided by typical value for detector read noise

3 – Power consumption based on values listed by manufacture during typical operation, not including cooling (TEC) or other additional electronics.

4 – Assuming the use of a heatsink in accordance with Hamamatsu recommendations on thermal conductivity, and an ambiant temperature of 25 C

5 – Binning in pair to 1024 pixel available

6 – 250 kHz Line-rates only available with CameraLink interface

7 – 61 kHz at 2048 pixel and 101 kHz at 1024 pixels read out.

8 – Typical power consumption when operated at -60 C.

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