Detector selection guide
The table below can be used to identify which type of linear array detector best suits your spectroscopy application based on:
- Wavelength range
- High sensitivity versus large dynamic range/high SNR
- Integration time
For wavelengths below 1100 nm (UV, VIS, NIR), you should use silicon detectors (CCD or CMOS/NMOS), and for wavelengths above 1100 nm, you should choose InGaAs detectors.
For silicon detectors, choose CMOS/CCD’s when you have low light levels and therefore need high sensitivity, and choose NMOS, when you have higher light levels and want the best signal-to-noise ratio and/or dynamic range.
Choose cooled detectors, when your application requires long integration times.
UV-VIS-NIR 190-1100 nm wavelength range | NIR 900-2500 nm wavelength range | ||||
---|---|---|---|---|---|
High Sensitivity | High SNR | ||||
Integration time | Detector type | Examples | Detector type | Examples | |
Deep cooled CCD | Andor iVac 316 | ||||
10 sec | - | ||||
1-stage TE cooled BT-CCD | Hamamatsu S7031 series | 2-stage TE cooled InGaAs | Hamamatsu G9206 | ||
1 sec | - | ||||
Non-cooled BT-CCD | Hamamatsu s10420 series | 1-stage TE cooled InGaAs | Hamamatsu G9203/G9204/G9214 | ||
100 msec | - | ||||
10 msec | - | ||||
Non-cooled CMOS | Hamamatsu S11639 Hamamatsu S13496 Hamamatsu S14739 | Non-cooled InGaAs | Hamamatsu G11620 series Hamamatsu G13913 series |
||
1 msec | - | ||||
100 microsec | - | ||||
10 microsec | - | ||||
1 microsec | - | Non-cooled BT-CCD w. Global shutter | Hamamatsu S11156 | ||
Want to know more?
For further information see below.